Level 107 stress parameters

[Mehmet Cirit (Ceridli)]

I  am getting an error on a finfet, level 107, with  SA parameter, defined as an instance parameter. I don't see this  parameter

on  page 661 listed either. This a diffusion stress parameter.  I thought such parameters

were standard since BSIM4. Am I missing something?

[Thomas Russo]

The BSIM-CMG model does not have the SA parameter in any version provided by the BSIM group, and it is not documented in their technical manuals for any version of that device series.

SA is defined by the bsim4, bsim6, bsim-soi, and a bunch of others, but not for the BSIM-CMG.   

You can find the manual for the BSIM-CMG that was provided by the BSIM group at the BSIM group's web site, https://www.bsim.berkeley.edu/models/bsimcmg/, but you'll have to download the full source code to find it.

Xyce also has a copy of that documentation at https://github.com/Xyce/Xyce/blob/master/utils/ADMS/examples/bsimcmg_107.0.0/BSIMCMG107.0.0_TechnicalManual_20130712.pdf

[Mehmet Cirit]

Thanks for the explanation. 

When diffusion is shared between adjacent rows, stress factors change depending on the

layout of the adjacent row. I was thinking they were trying to model a worst-case scenario with these parameters. I wondered why these parameters are not included among the approximately 40-50 random variation parameters they already have. They can be modeled the same way the variation of l or thinox is handled.

I found two online docs from PDF Solutions regarding this issue, which they call LLE (local layout effects). Based on device simulations they carried out, they report a 2-10% change in some parameters, such as mobility and threshold at 7nm. If the fab used measured IV data, these effects are already included in the models. Their temperature dependency may differ. Probably Berkeley people did the right thing by keeping them out.

I think these effects are accounted for twice when modeled with external proximity parameters. It is another way to add pessimism.

 

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