CHENLU HOU wrote:
> In the project spec, it says "define gate electrode as a metal".. If we are
> implementing poly gate, in tsuprem, are we supposed to:
> 1. deposit metal and specify the work function the same as poly, and use the
> electrical EOT
> 2. deposit poly, and use physical EOT?
>
> thanks
After rereading the project handout. I seems like we can ignore poly
dep. Since this is the case, you have to adjust your gate oxide to
match the EOT of the ITRS. The ITRS EOT, takes into account of poly dep
and SiNxOy. So whatever you make your gate make sure to match that EOT.
Then as far as gates are concerned. I assume it would be good to use a
gate last process, and since we're not simulating poly gate, defining
the workfunction appropriately for whatever material you use should
suffice, even when using poly gate.
-Daniel