Re: Black Mass (2015) 720p HQ AC3 DD5.1 Eng Nl Subs 2LT
Eliazar Basile
Regular arrays of poly(ethylene) deposits, about 10 nmhigh and 160 nm in diameter, separated by 340 nm, are formed by simplyrubbing the polymer plate against the flat surface of silicon. In general,the polymer transfer can be categorized into four situations: no transfer,macroscopic depositions, nanometer-scale depositions with or without orienteddots. There exist ranges of the conditions that the mesoscopic dot formationoccur. The substrate temperature must be below and close to the bulk meltingpoint of the polymer. At a given temperature, the rubbing rate must bewithin a certain range to induce mass transfer. The silicon surface needsto be prepared so that the polymer wets completely. While high and lowdensity polymers showed the analogous results, a low-molecular weight,linear polymer failed to produce mesoscopic dots. This means that viscoelasticproperties and wetting characteristics, rather than surface tensions, areimportant in dot formation.
Previously, we showed a new method of using silver (Ag)nanocrystal wires as a shadowmask to produce nanometer-size photoresistwire patterns. In this abstract, we describe the use of the same techniqueto fabricate nanometer-size silicon (Si) wire patterns. In this technique,organically functionalized Ag nanocrystals (2-100nm) can assemble intolamella (wire-like) phases. The width of the wires could be controlledfrom 20 to 300nm, and for a given set of wires, a narrow distribution ofwidths 15-25% could be obtained. The wire patterns can be transferred asLangmuir-Scheffer (horizontal lift-off) films to the polymethyl methacrylate(PMMA) coated Si substrates. The height of this nanocrystal pattern wasamplified by immersing the substrate in a solution containing decanedithiolfollowed by immersing the substrate into a hexane/nanocrystal solution.This amplification doubled the height of the wires to about 8nm. The areasoccupied by organic ligands between the nanocrystals in the wire decreasedthrough a metallization process-ripening of the nanocrystals by mass transferbetween the nanocrystals. The wire patterns were transferred to the PMMAfilms by spatially selective electron beam exposure on the Ag nanocrystalwire shadowmask. 50nm wide Si wire patterns were formed by a subsequentanisotropic reactive ion etching (RIE) process. Monte Carlo simulationwas done to estimate the electron stopping power for the Ag nanocrystalshadowmask at low voltage. This technique allows for the use of low energyelectron beam exposure (700V), which reduces the proximity effects andis suitable for low cost and high throughput fabrication of semiconductornanometer-scale structures.
Matt, I am concerned that your ego will develop a mass of gigantic proportions that will collapse into a microscopic black hole that sucks you into it, before finally collapsing with a sad little farty noise. Pffft.
"....I am concerned that your ego will develop a mass of gigantic proportions...." Don't worry, A$$ange and co seem to be lightyears ahead in that department. Now, if only we could find a way to turn the resultant black hole into a singularity then we might actually have a use for A$$nut.