Sam Roberts Band Chemical City Zip
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Nelson Suggs
Jul 10, 2024, 12:36:04 AM7/10/24
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This paper reports a systematic study of the effects of the cracker cell temperature and the input V/III ratio on the growth of GaInP. GaInP epilayers were grown on GaAs (001) substrates using triisopropylgallium, ethyldimethylindium and tertiarybutylphosphine by chemical beam epitaxy. The surface morphology, growth rate, low temperature (15 K) and room temperature (300 K) photoluminescence (PL) were studied as a function of the cracker cell temperature and input V/III ratio. At an optimum cracker cell temperature and input V/III ratio, the PL spectrum showed only a strong band edge peak with a full width at half maximum of 10.8 meV.
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