If interested, please send inquiries to jeffrey.worth at
gmail.com
Note: I am doing this as a service to the community and will not
accept any fees or other compensation.
Profile
• Photovoltaic device fabrication and characterization.
• Biometric device fabrication and characterization.
• ULSI, HDD, and MEMS structure technology.
• Novel material and processing introduction.
• Quality, Reliability and Failure Analysis.
• Suppliers and Vendors management.
• Cross-functional team coordination.
Skills
• Hands-on capabilities in broad range of methods and instrumentation.
• Thin film device fabrication technology development and validation.
• In-line and stand-alone testing and qualification methodology.
• Statistical Methods: SPC, JMP, FMECA, DOE, ANOVA.
• Process integration and interface engineering.
Experience
Sr. Staff Engineer, Xerocoat, Inc, Redwood City,
CA 2008-current
Responsible for AR-thin film deposition and characterization methods
development
•Achieved ∆TAM1.5G >3% increase for single side AR coating on solar
substrates for Roll-to-Roll deposition method by optimizing precursor
formulation-process parameters via sequential DOEs to comply with PV-
customers’ spec for solar panel fabrication.
•Extended pot and shelf life of a precursor from hours to months by
implementing 2-part cartridge-based fluid delivery system with in-line
mixing and dispensing.
•Developed and built 3-channel inspection and measurement system for
large size glass panels in-line characterization and yield monitor for
turnkey system.
•Identified surface energy activation techniques for wide variety of
glass substrates amplifying coating process efficiency and yield.
•Designed and owed Metrology and Reliability Labs, acquired, installed
and maintained instrumentation, created SOPs for surface analysis,
microstructural and environmental testing.
Sr. Sensor Technologist, Fidelica Microsystems, Milpitas,
CA 2007-2008
Responsible for thin film R2R technology development and
characterization
•Increased metal-a-Si film stack R2R sputtering yield by 46%
optimizing HW configuration and process parameters at vendor site via
sequential DOEs that allowed achieving of low cost-high throughput
multilayer deposition without compromising quality and reliability.
•Introduced and qualified alternative substrate material, which
tolerates high-energy photon exposure that resulted in annealing
technology enhancement producing electrical stable a-Si active layer.
•Revised sensor assembly procedure coordinating internal task force
team and outsource vendors reducing failure rate of as-produced and in-
stock devices.
•Designed and implemented structural testing procedure correlating I-V
probing and in-film defect distribution with mechanical and
environmental qualification results providing feedback for CIP.
•Eliminated critical defects of BIC coating processing working closely
with oversea vendor and domestic subcontractors on HW and
manufacturing practices upgrades that resulted in greater scratch
resistance and durability of end product.
Sr. Member of Technical Staff, Applied Materials, Santa Clara,
CA 2005-2007
Responsible for thin film technology development, characterization,
and validation.
•Received Material Technology Excellence Award for Zero defect chamber
performance achieved by creating new fabrication procedure for bulk
metal oxide components improving crystallinity and local stress
concentration. (Patent granted)
•Received ECFI GM Performance Excellence Award for wide band gap
materials conductivity study revealing UV-induced PV-effect impact.
The results allowed for parts’ lifetime enhancement.
•Developed novel routing for erosion resistant metal oxide films
formation that allows multiple compounds’ deposition on substrates of
any shape, size, and geometry. (Patent granted)
•Eliminated growth strain field and Oxygen clusters for columnar poly-
Si material working with oversea vendor improving microstructure and
uniformity. (Patent granted)
•Coordinated multiple cross-functional teams including Applied
Materials Operation, Product Engineering, local and global vendors for
critical chamber components fabrication procedure tune-up that
resulted in end product performance meeting Q&R requirements at the
customer site.
•Assembled Material and Device characterization Lab upgrading
electrical, optical and e-beam methods and expanding with AFM, TGA,
DSC, XRFS, I-V, RF&DC measurements,
Created BKM and SOP, trained personnel, conducted PM and calibration.
•Conducted FA and FMEA for chamber components and process excursions
using analytical and statistical methods providing root cause analysis
and corrective actions requests.
•Updated and upgraded manufacturing facility by providing educational
materials, monitoring methodology, instrumentation, training,
consulting, and audit reducing customers’ complains.
Sr. Development Engineer, Ultradots, Fremont, CA
2003-2005
Responsible for thin film PV-device technology development and
characterization.
•Provided Ge-enhanced PV-cell fabrication technology development with
DVT (Design Verification Testing) and modeling using various device
characterization and analysis techniques, built and operated IV and
EQE test benches, Raman spectroscopy system, AFM, SEM, FIB, FT-IR, UV-
Vis, XRD and TGA.
•Improved acceptance for Si, Ge, Corning Glass, Vycor, Quartz
substrates by implementing multistep in-line wet cleaning procedure
resulted in defect reduction, adhesion improvement, uniformity
enhancement, and oxide trapped charge removal.
•Decreased TCO coating contact resistance down to less than 10 Ohm/cm2
by optimizing doping level and deposition process parameters.
Introduced post-process annealing step eliminating initial stress and
delamination.
•Conducted permanent material strategy development for multi layer
thin film device fabrication performing literature search,
morphological and electrical characterization, sample preparation, and
analysis and processing outsourcing.
•Defined best practice outsourcing, statistically analyzed data using
JMP and ANOVA, compiled reports and presentations, participated in a
company roadmap development.
Sr. Process Engineer, Applied Materials, Santa Clara,
CA 2000-2003
Responsible for material technology development and characterization.
•Received two Applied Materials Dielectric Etch awards for the “within
spec” process tools performance providing process diagnostic and
control analysis feedback for hardware design refinement and material
choice optimization.
•Explored and implemented new material source concept and real time
qualification technique for critical chamber components ensuring low
cost, high performance and manufacturability of end product.
•Developed BKM for swapped chamber parts cleaning procedure employing
proper handling protocols, customized fixtures, ultrasonic bath, and
specialized drying stations.
•Supported field offices and customers’ technology personnel with
customer issues resolution performing failure analysis, corrective
action request, equipment troubleshooting, participating in conference
calls, conducting field auditing.
•Completed AMAT Module Line Short Loop Yield enhancement project
providing defect root cause analysis, using laser scattering
inspection tools (SP1, WF736 and COMPASS), defect review SEMVision
with EDX detector, FIB (SMART-Tool), Raman spectroscopy and Yield
Management Software. Published and presented paper on SPIE 27th
Annual International Symposium.
•Coordinated and conducted Demo sessions for customers ensure proper
calibration and layer-specific recipe creation, taught Process
Diagnostic and Control class at AGU.
•Evaluated and contracted outsource suppliers, vendors, and service
providers; worked closely with external customers and internal
business groups
Sr. Staff Scientist, Bourevestnik, Inc. St Petersburg, Russia.
http://www.bourevestnik.ru 1988-1999
Responsible for scientific instrumentation development and
validation.
•Increased single crystal SiC wafer diameter up to 70 mm by modifying
growing chamber design and new reactor material introduction.
Verified microstructure of the hexagonal SiC polytype 6H using XRD and
SAED. Studied dislocation density impact on an epitaxial b SiC film
growth using TEM. Transferred technology to the USA customer site.
•Stabilized polycrystalline Si/GaAs interface by reducing Si doping
level to prevent interdiffusion. Morphology and composition were
studied with RBS, SIMS, and HR TEM.
•Designed and built lab system for rechargeable polymeric films growth
on SiC substrate and developed ECD method using cycling voltammetry
for microelectrode fabrication. Conducted thin film adhesion failure
employing Micro Scanning Impact testing.
•Designed and managed fabrication of electrochemical micro cell with a
Glassy Carbon working electrode and sol-gel based Ag reference
electrode. Installed, completed start-up procedure, and validated
analytical method at the customer site. Improved detection limit by
two orders of magnitude.
Education and Professional Affiliation
BS, Physics, Polytechnic Institute, St.Petersburg, Russia
MS, Material Science, Polytechnic Institute, St.Petersburg, Russia
Analytical and Metrology Tool Certifications, AGU, Santa Clara, CA
Data Management and Statistical Analysis Certification, AGU, Santa
Clara, CA
Digital Design Verification, Portnov Computer School, Santa Clara, CA
Member of American Vacuum Society
Member of Material Research Society.