The flyback diode (Onsemi MBRA210LT3) used with Small MOSFETs has
reverse voltage rated to max 10V and the operating voltage for the board
is defined 12-24V -> there is a mismatch with the diode and
operating voltage limits. We noticed this when assembling components for
Small MOSFET Q4: during the test run, diode D9 and MOSFET Q4 were
destroyed when we turned the MOSFET Q4 ON (we have 4x v1.1 board and 24V
VBB in our system. When the MOSFET is turned ON there is 24V reverse
voltage over the diode D9 and it burns to short circuit state which
leads the MOSFET Q4 to break as well). I can give more details about the issue if needed.
The
components (D9, Q4) we assembled were exactly the same as there were
with other small mosfets (Q8 and Q9) and we got the part codes/numbers
directly from the BOM.
We measured the ordered
diodes on the table and they started to conduct (and break) when the
reverse voltage reached about 20V. We didn't try the same with the
'factory assembled' diodes but most likely they work because of diode
manufacturing process tolerance and thus can tolerate the 24V VBB.
We'd
like to propose using flyback diode having reverse voltage rating
>30V (f.ex. MBRA140T3G or similar) to make the design functional over
the whole operating voltage range of 12-24V: how to get this change
done so the boards would be ok when we order new ones in the future?
-tomi