On Wed, 3 Aug 2022 04:18:37 -0700 (PDT), amal banerjee
<
daku...@gmail.com> wrote:
>Dear All,
>
>I am planning on writing and publishing a lecture notes style reference book
>on ALL homogeneous and heterogeneous junction semiconductor devices.
>The list includes BJTs, FETs, MOSFETs, HBTs, HEMTs, LEDs, Solar cells,
>VCSELs etc. The main reason for writing this book are :
>1, Very few(miniscule) of the available books have any material on
>heterogeneous junction devices.
>2. Available books fall short on the key details - e.g., the sequence of steps
>involved in creating the crucial energy band diagrams when e,g., two isolated
>oppositely doped semiconductors are brought in contact.
>3. Some semiconductor device books are written by physicists who overlook
>large signal models and equivalent circuit models. Other books written by
>pure electronics people ignore the key quamtum or statistical mechanics that govern semiconductor device operation. No mention of the large signal Angelovc models for HDTs, HEMTS.
>
>A tentative list of topics is as follow - it will be expanded.
>
[snip]
>
>C. Homo|Heterogeneous Semiconductor Junction(np|Np) Fundamentals
>-Homogeneous np Semiconductor Junction
>-Homogeneous np Junction with External Bias
>-Quasi Fermi Levels
>-Heterogeneous Semiconductor Junctions Np and Pn
>-Heterogeneous Semiconductor Junction Quasi Fermi Level Splitting
>
>D. Basic Heterogeneous Bipolar|Bijunction Transistor(HBT)
>-Types of Heterogeneous Bipolar Transistor and Characteristics
>-The Collector and Base Current of a HBT
>-Emitter Hole Current in a HBT
>-Simple DC Equivalent Circuit Model for Heterogeneous Transistor(HBT)
>
>E. Advanced VBIC, Non-VBIC Heterogeneous Bipolar|
> Bijunction Transistor(HBT) - Large Signal Models
>- Parameters - Equivalent Electrical Circuits
>-The VBIC Model Specification
>-VBIC Homogeneous Junction Bipolar Transistor
>-VBIC Heterogeneous Junction Bipolar Transistor
>-Non-VBIC Heterogeneous Junction Bipolar Transistor
>
>F. Basic High Electron Mobility Transistor(HEMT)
>-Metal-Semiconductor Junction, Schottky Diode, Ohmic and Rectifying Junction
>-Metal-Semiconductor Field Effect Transistor - Drain Curremt
>-High Electron Mobility Transistor(HEMT) - Potential Wells, Undoped Layer Two Dimensional Electron Gas(2DEG) and Properties
>
>All hints, suggestions recommendations are welcome. Thanks in advance.
What is often missing is a discussion of what drives noise generation
in the various transistor types. This kind of data is essential in
many practical low-noise applications, and it's useful to know how the
various transistor types compare, and how the noise scales with device
details.
There are two major kinds of noise to addressed, being flat-band (the
noise floor), and flicker noise at low offset frequencies. These
differ in their physical causes.
Both current and voltage noise must be considered. Spurs are ignored
here.
The noise floor is typically Gaussian, and often arises from thermal
and shot-noise sources.
The sources of flicker noise are many and mostly unknown, but cleaner
material and bigger device volume both reduce the flicker level.
Flicker noise follows a sum of kn/f^n terms formula, where n is an
integer from zero to three or four.
One mistake one often sees is that the offset-frequency location where
the Flicker noise curve crosses the noise floor is cited as defining
the flicker noise. The problem is that variation in noise floor level
will change this intersection, even though the flicker noise is
unchanged, so it's best to tabulate the coefficients kn of the kn/f^n
terms.
Joe Gwinn