"Mike Perkins" <
sp...@spam.com> wrote in message
news:1KqdnUMxCooIJ8fO...@bt.com...
> Whereas a SCR or TRIAC will themselves have a overriding di/dt
> specification without any further circuit considerations complicating
> the issue.
Yeah, AFAIK it's just dV/dt for FET structures. Something about
forward-biasing the parasitic BJT structure (same idea as thyristor dV/dt,
but much less sensitive).
I don't think I've ever heard it explained why that's a bad thing --
surely it just manifests as excessive Miller effect at high rates.
Presumably, the minority carriers also stick around for a while, with an
effect similar to body diode recovery (taking on the order of ~200ns in
power devices), which will cause excess dissipation, but not outright
destruction. Dunno.
Thyristor dI/dt, of course, is bad because of hot spots, and dV/dt because
of re-latching.
Tim
--
Seven Transistor Labs
Electrical Engineering Consultation
Website:
http://seventransistorlabs.com