2N3819 JFET spice model

[Jean-Marie Bussat]

Hello,

Does anybody have or can tell me where I can find the spice
model of a 2N3819 model JFET transistor.

Thanks in advance for your help.
Regards,

Jean-Marie

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+---------------------------------------------------------------+
| Jean-Marie Bussat - Laboratoire d'Annecy-le-vieux de Physique |
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[Stephane TOSTI]

Voilà

.model J2N3819 NJF(Beta=1.57m Lambda=4m Vto=-1.954
+ Cgd=1.5p M=.3821 Pb=1 Fc=.5 Cgs=1.5p Is=173.3f
+ N=1 Xti=3 Kf=37.24E-18 Af=1)

A+ Stef.

[jrg lbt]

El jueves, 11 de junio de 1998 a las 2:00:00 UTC-5, Stephane TOSTI escribió:

Ooooh! Thanks a lot !!!

[legg]

On Sat, 26 Feb 2022 11:14:20 -0800 (PST), jrg lbt <jrgl...@gmail.com>
wrote:

from 1998 . . . .

RL

[Andrea Croci]

On 01.03.22 19:50, legg wrote:
> On Sat, 26 Feb 2022 11:14:20 -0800 (PST), jrg lbt <jrgl...@gmail.com>
> wrote:
>
>> El jueves, 11 de junio de 1998 a las 2:00:00 UTC-5, Stephane TOSTI escribió:

>> Ooooh! Thanks a lot !!!
>
> from 1998 . . . .
>
> RL

It's never too late to thank your fellow engineers.

[legg]

On Sat, 26 Feb 2022 11:14:20 -0800 (PST), jrg lbt <jrgl...@gmail.com>
wrote:

.model 2N3819 NJF(Beta=1.304m Betatce=-.5 Rd=1 Rs=1
+ Lambda=2.25m Vto=-3 Vtotc=-2.5m Is=33.57f Isr=322.4f
+ N=1 Nr=2 Xti=3 Alpha=311.7u Vk=243.6 Cgd=1.6p M=.3622
+ Pb=1 Fc=.5 Cgs=2.414p Kf=9.882E-18 Af=1 mfg=Vishay)

from current LTspice distribution.

2N3819 was always poorly defined w/r data sheet.
Many vendors, many wafers, many processes were used.

RL

[Phil Hobbs]

Yeah, using SPICE on a part with a 3:1 range of pinchoff voltage is
going to lead to a lot of reasonable-looking wrong answers (my
least-favorite kind).


Cheers

Phil Hobbs


--
Dr Philip C D Hobbs
Principal Consultant
ElectroOptical Innovations LLC / Hobbs ElectroOptics
Optics, Electro-optics, Photonics, Analog Electronics
Briarcliff Manor NY 10510

http://electrooptical.net
http://hobbs-eo.com

[Phil Hobbs]

Wow, that's an amazingly crappy part, even for a JFET.

The Fairchild datasheet shows a 15:1 range of pinchoff voltages, and
that's from just one vendor.

Using SPICE on a part like that is going to generate a lot of

[Dave Platt]

In article <8ea114da-661e-405f...@electrooptical.net>,

Phil Hobbs <pcdhSpamM...@electrooptical.net> wrote:

>> 2N3819 was always poorly defined w/r data sheet.
>> Many vendors, many wafers, many processes were used.
>
>Wow, that's an amazingly crappy part, even for a JFET.
>
>The Fairchild datasheet shows a 15:1 range of pinchoff voltages, and
>that's from just one vendor.

I've always thought of 2N3819 as the JFET analog of the 2N3055 BJT.
It's a convenient part number into which you can reasonably throw a
whole lot of different JFET products. Test what you fab, and if they
don't meet tighter specs for a targeted part number, just call them
2N3819.

[Phil Hobbs]

They must have made them in saucepans. Actual _good_ JFETs, such as the
CPH3910, have much much tighter specs (and much lower noise).

Cheers

Phil Hobbs
"40,000 of them in stock"

[jf03...@gmail.com]

On Thursday, April 7, 2022 at 1:30:18 PM UTC-7, Phil Hobbs wrote:
> They must have made them in saucepans. Actual _good_ JFETs, such as the
> CPH3910, have much much tighter specs (and much lower noise).

I always assumed it reflected the manufacturing processes available at the time. By that time, the planar diffused process was pretty common, and it was much better controlled than using the grown-junction or alloy-junction processes. Good engineers learned how to design circuits that could tolerate the variations in those processes and the variations produced by varying operating temperatures and voltages. Ion implantation produced much tighter ranges, but it was still not a common manufacturing process in the mid 1970s.

[Phil Hobbs]

IIRC the usual planar JFET of that era has a Vp range of around 3:1.
This piece of crap's range is 15:1.

Cheers

Phil Hobbs

[legg]

On Mon, 11 Apr 2022 13:30:48 -0400, Phil Hobbs
<pcdhSpamM...@electrooptical.net> wrote:

>jf...@my-deja.com wrote:
>> On Thursday, April 7, 2022 at 1:30:18 PM UTC-7, Phil Hobbs wrote:
>>> They must have made them in saucepans. Actual _good_ JFETs, such as the
>>> CPH3910, have much much tighter specs (and much lower noise).
>> I always assumed it reflected the manufacturing processes available at the time. By that time, the planar diffused process was pretty common, and it was much better controlled than using the grown-junction or alloy-junction processes. Good engineers learned how to design circuits that could tolerate the variations in those processes and the variations produced by varying operating temperatures and voltages. Ion implantation produced much tighter ranges, but it was still not a common manufacturing process in the mid 1970s.
>>
>
>IIRC the usual planar JFET of that era has a Vp range of around 3:1.
>This piece of crap's range is 15:1.
>
>Cheers
>
>Phil Hobbs

I think the 3:1 range for one part number was achieved
by binning a series of numbers (typically 4 or more) from
the same mfring process batch.

RL

[jf03...@gmail.com]

On Monday, April 11, 2022 at 10:30:51 AM UTC-7, Phil Hobbs wrote:
> >
> IIRC the usual planar JFET of that era has a Vp range of around 3:1.
> This piece of crap's range is 15:1.

My recollection is that there were not very many other commercial JFETs for comparison. And the specs for the MOSFETs were even more poorly controlled because they did not understand the manufacturing hygiene required to control the surface states.

I remember the standard bipolar transistor hfe spec had a 3:1 range. They narrowed by testing and selecting parts, so there were lots of "families" with consecutive numbers and similar specs except for the buckets for the selected parameter (hfe, BVceo, fT, etc).