Hi Viktor,
First, welcome to the forum.
My suspicion is that the -5.5V is more appropriate for SunPower’s (now Maxeon’s) interdigitated back contact cells, whereas -10 to -20 V is more typical of “standard” x-Si cells. My understanding is that, independent from the protective bypass diodes, the -5.5 gives less power loss from, say, a single shaded cell in a module string. However, driving a cell in reverse bias is not without other consequences, such as heating, but I am not an expert here.
Unfortunately, I cannot provide any good advice as to how to get good estimates of the model parameters you need. I also have never seen a sensitivity analysis that might suggest which ones you should spend more time and money on to estimate. (I’d be delighted to know if you find one.) I think some people have actually covered single cells, taken I-V curves of a module, and then tried to fit the breakdown and bypass-diode parameters by fitting those curves. That said, it would be much nicer (and cheaper) if manufactures just shared accurate estimates 🙂.