Buy Insulated-Gate Bipolar Transistor or IGBT, Power Transistor Module on USComponent
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DAVID SMITH
Mar 8, 2015, 1:49:04 PM3/8/15
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Article Title: Buy Insulated-Gate Bipolar Transistor or IGBT, Power Transistor Module on USComponent
Author: DAVID SMITH
Word Count: 607
Article URL: http://www.isnare.com/?aid=1928357&ca=Business
Format: 64cpl
Contact The Author: http://www.isnare.com/eta.php?aid=1928357
Easy Publish Tool: http://www.isnare.com/html.php?aid=1928357
*********************** ARTICLE START ***********************
Visit http://www.USComponent.com/ to see our products and featured IGBT manufacturers.
The insulated-gate bipolar transistor (IGBT) is a functional integration of Power MOSFET and BJT devices in monolithic form. It combines the best attributes of both to achieve optimal device characteristics. The IGBT is a three-terminal power semiconductor device primarily used as an electronic switch that can essentially combine high efficiency with fast switching much like the MOSFET.
History of IGBT
First-Generation of IGBTs was on 1980s to early 1990s were prone to failure through such modes as
-latch-up (in which the device will not turn off as long as current is flowing)
-and secondary breakdown (in which a localized hotspot in the device goes into thermal runaway and burns the device out at high currents).
Second-generation devices were ameliorated, and the current third-generation ones are even more refined, with speed rivaling MOSFETs, and excellent ruggedness and tolerance of overloads.
An IGBT features a significantly lower forward voltage drop compared to a conventional MOSFET in higher blocking voltage rated devices.
IGBTs are favored by high voltage, high current and low switching frequencies while MOSFETs are better for handling low voltage, low current and high switching frequencies
The IGBT is a semiconductor device with four alternating layers (P-N-P-N) that are controlled by a metal-oxide-semiconductor (MOS) gate structure without regenerative action. The additional P-N junction blocks reverse current flow. This means that unlike a MOSFET, IGBTs cannot conduct in the reverse direction. In bridge circuits, where reverse current flow is needed, an additional diode is placed in parallel with the IGBT to conduct current in the opposite direction. The penalty isn't overly severe because at higher voltages, where IGBT usage dominates, discrete diodes are of significantly higher performance than the body diode of a MOSFET.
Eupec Infineon - Infineon Technologies AG is a german manufacturer that spun off from its parent company Siemens AG to form its own semiconductor operations legal entity.
Fuji - Fuji Electric was established in 1923 as a capital and technology tie-up between Furukawa Electric and Siemens AG.
International Rectifier - International Rectifier is an American power management technology company that has recently become a part of Infineon Technologies in early 2015
IXYS - IXYS Corportation is a California based company founded in 1983.
Mitsubishi - Mitsubishi Electric Corporation is a Japanese electronic and electrical equipment manufacturing giant.
Powerex - Powerex Inc., is a Pennsylvania-based company specializing in high power semiconductor applications
Semikron - Semikron is an independent, family-owned and internationally leading manufacturer of power semiconductor components.
Toshiba - Toshiba Corporation is a Japanese multinational conglomerate manufacturing electronics worldwide.
In conclusion, IGBTs have been utilized for many years and have been produced by various manufacturing giants for the reason that they integrate the advantages of both Power MOSFET and BJT to achieve optimal device characteristics. IGBTs continue to prove their usefulness and feasibility in today's modern society with its diverse purposes and functionalities.
Like us on Facebook:
https://www.facebook.com/YoungNewCenturyLlc
Follow Us On:
Google: https://plus.google.com/111572781640535017644/posts
Twitter: https://twitter.com/uscomponent
Pinterest: https://www.pinterest.com/david5647/
Related Search Terms:
IGBT
Power Transistor
Transistor IGBT
IGBT Module
Bipolar Transistor
Insulated-Gate Bipolar Transistor
IGBT Power Module
Power Transistor Module
IGBT Transistor
USComponent
*********************** ARTICLE END ***********************
- To distribute your articles go to http://www.isnare.com/distribution.php
- For more free-reprint articles go to http://www.isnare.com
Message delivered directly to members of the group:
publish-the...@googlegroups.com
*****************************************************************
Please consider this free-reprint article written by:
DAVID SMITH
*****************************
IMPORTANT - Publication/Reprint Terms
- You have permission to publish this article electronically in free-only publications such as a website or an ezine as long as the bylines are included.
- You are not allowed to use this article for commercial purposes. The article should only be reprinted in a publicly accessible website and not in a members-only commercial site.
- You are not allowed to post/reprint this article in any sites/publications that contains or supports hate, violence, porn and warez or any indecent and illegal sites/publications.
- You are not allowed to use this article in UCE (Unsolicited Commercial Email) or SPAM. This article MUST be distributed in an opt-in email list only.
- If you distribute this article in an ezine or newsletter, we ask that you send a copy of the newsletter or ezine that contains the article to http://www.isnare.com/eta.php?aid=1928357
- If you post this article in a website/forum/blog, ALL links MUST be set to hyperlinks and we ask that you send a copy of the URL where the article is posted to http://www.isnare.com/eta.php?aid=1928357
- We request that you ask permission from the author if you want to publish this article in print.
The role of iSnare.com is only to distribute this article as part of its Article Distribution feature ( http://www.isnare.com/distribution.php ). iSnare.com does NOT own this article, please respect the author's copyright and this publication/reprint terms. If you do not agree to any of these terms, please do not reprint or publish this article.
*****************************
Article Title: Buy Insulated-Gate Bipolar Transistor or IGBT, Power Transistor Module on USComponent
Author: DAVID SMITH
Word Count: 607
Article URL: http://www.isnare.com/?aid=1928357&ca=Business
Format: 64cpl
Contact The Author: http://www.isnare.com/eta.php?aid=1928357
Easy Publish Tool: http://www.isnare.com/html.php?aid=1928357
*********************** ARTICLE START ***********************
Visit http://www.USComponent.com/ to see our products and featured IGBT manufacturers.
The insulated-gate bipolar transistor (IGBT) is a functional integration of Power MOSFET and BJT devices in monolithic form. It combines the best attributes of both to achieve optimal device characteristics. The IGBT is a three-terminal power semiconductor device primarily used as an electronic switch that can essentially combine high efficiency with fast switching much like the MOSFET.
History of IGBT
First-Generation of IGBTs was on 1980s to early 1990s were prone to failure through such modes as
-latch-up (in which the device will not turn off as long as current is flowing)
-and secondary breakdown (in which a localized hotspot in the device goes into thermal runaway and burns the device out at high currents).
Second-generation devices were ameliorated, and the current third-generation ones are even more refined, with speed rivaling MOSFETs, and excellent ruggedness and tolerance of overloads.
An IGBT features a significantly lower forward voltage drop compared to a conventional MOSFET in higher blocking voltage rated devices.
IGBTs are favored by high voltage, high current and low switching frequencies while MOSFETs are better for handling low voltage, low current and high switching frequencies
The IGBT is a semiconductor device with four alternating layers (P-N-P-N) that are controlled by a metal-oxide-semiconductor (MOS) gate structure without regenerative action. The additional P-N junction blocks reverse current flow. This means that unlike a MOSFET, IGBTs cannot conduct in the reverse direction. In bridge circuits, where reverse current flow is needed, an additional diode is placed in parallel with the IGBT to conduct current in the opposite direction. The penalty isn't overly severe because at higher voltages, where IGBT usage dominates, discrete diodes are of significantly higher performance than the body diode of a MOSFET.
Eupec Infineon - Infineon Technologies AG is a german manufacturer that spun off from its parent company Siemens AG to form its own semiconductor operations legal entity.
Fuji - Fuji Electric was established in 1923 as a capital and technology tie-up between Furukawa Electric and Siemens AG.
International Rectifier - International Rectifier is an American power management technology company that has recently become a part of Infineon Technologies in early 2015
IXYS - IXYS Corportation is a California based company founded in 1983.
Mitsubishi - Mitsubishi Electric Corporation is a Japanese electronic and electrical equipment manufacturing giant.
Powerex - Powerex Inc., is a Pennsylvania-based company specializing in high power semiconductor applications
Semikron - Semikron is an independent, family-owned and internationally leading manufacturer of power semiconductor components.
Toshiba - Toshiba Corporation is a Japanese multinational conglomerate manufacturing electronics worldwide.
In conclusion, IGBTs have been utilized for many years and have been produced by various manufacturing giants for the reason that they integrate the advantages of both Power MOSFET and BJT to achieve optimal device characteristics. IGBTs continue to prove their usefulness and feasibility in today's modern society with its diverse purposes and functionalities.
Like us on Facebook:
https://www.facebook.com/YoungNewCenturyLlc
Follow Us On:
Google: https://plus.google.com/111572781640535017644/posts
Twitter: https://twitter.com/uscomponent
Pinterest: https://www.pinterest.com/david5647/
Related Search Terms:
IGBT
Power Transistor
Transistor IGBT
IGBT Module
Bipolar Transistor
Insulated-Gate Bipolar Transistor
IGBT Power Module
Power Transistor Module
IGBT Transistor
USComponent
*********************** ARTICLE END ***********************
- To distribute your articles go to http://www.isnare.com/distribution.php
- For more free-reprint articles go to http://www.isnare.com
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