Transistor Marking

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Cherie Trojak

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Aug 5, 2024, 5:44:52 AM8/5/24
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Troubleis there is no complete consensus on these markings and there are duplications so you need to consider the style of the markings and double-check with the spec. sheet of the manufacturer (usually the last sheet before the performance graphs).

My articulating lamp died and I thought I might be able to fix it. I opened the controller and found a PCB with what looks like two output (FET?) transistors on the lamp end. I searched the numbers (AO9T) and found nothing. Is this a legitimate item number? Or, is it some kind of shorthand for a longer number? The 'brain' chip has no number at all that I can see.


Due to the small size of most SMD components, manufacturers are not able to write the full part number on the case. They use instead a marking code typically composed of a combination of 2 or 3 letters or digits. When repairing an unknown electronic board, it becomes so difficult to know what is the exact type of a given component.


The MMBT3904LT1G is a general-purpose NPN silicon bipolar transistor designed for use in linear and switching applications. It is housed in the SOT-23 package, which is designed for lower power surface mount applications. The MMBT3904LT1G can be used in circuits requiring high-current density, and it can operate in a high voltage range. The MMBT3904LT1G's maximum emitter-base voltage is 6 V. Its maximum power dissipation is 300 mW.


ON Semiconductor (Nasdaq: ON) is driving energy-efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy-efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace, and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices, and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.


As a quick example of the pitfalls encountered when using these reverse lookups databases, consider two small-footprint SMD parts from a Tiny FPGA module that is sitting on my desk. Using the database that [JohnK] posted, the WXS is most likely a 3.2 V LDO by Richtek, part number RT9013-31GB. But WXS is also the code for a 3-pin PNP transistor. Richtek themselves says the RT9013 should be marked WX=, but that is based on a document from 2009. Richtek is one of the companies that says to contact them for the latest marking codes, so this may have changed in the past ten years.


I am not sure if best way to enter two letters is to offer all possible combinations :-) It might make sense when searching using touchscreen, but text input using keyboard would be a viable option as well if available.


If the objects are this small to not fit a full description, they are already not human friendly just because of their size.

How am I supposed to solder the tiny pads reliably with my normal sized hands?


The site is secure.

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We present a compact dot marker using a CW laser on a microcrystalline silicon (Si) thin film. A laser annealing shows a continuous crystallization transformation from nano to a large domain (> 200 nm) of Si nanocrystals. This microscale patterning is quite useful since we can manipulate a two-dimentional (2-D) process of Si structural forms for better and efficient thin-film transistor (TFT) devices as well as for photovoltaic application with uniform electron mobility. A Raman scattering microscope is adopted to draw a 2-D mapping of crystal Si film with the intensity of optical-phonon mode at 520 cm(-1). At a 300-nm spatial resolution, the position resolved the Raman scattering spectra measurements carried out to observe distribution of various Si species (e.g., large crystalline, polycrystalline and amorphous phase). The population of polycrystalline (poly-Si) species in the thin film can be analyzed with the frequency shift (delta omega) from the optical-phonon line since poly-Si distribution varies widely with conditions, such as an irradiated-laser power. Solid-phase crystallization with CW laser irradiation improves conductivity of poly-Si with micropatterning to develop the potential of the device application.


Cotton-based nanocrystalline cellulose (NCC), also known as nanopaper, one of the major sources of renewable materials, is a promising substrate and component for producing low cost fully recyclable flexible paper electronic devices and systems due to its properties (lightweight, stiffness, non-toxicity, transparency, low thermal expansion, gas impermeability and improved mechanical properties).Here, we have demonstrated for the first time a thin transparent nanopaper-based field effect transistor (FET) where NCC is simultaneously used as the substrate and as the gate dielectric layer in an 'interstrate' structure, since the device is built on both sides of the NCC films; while the active channel layer is based on oxide amorphous semiconductors, the gate electrode is based on a transparent conductive oxide.Such hybrid FETs present excellent operating characteristics such as high channel saturation mobility (>7 cm(2) V (-1) s(-1)), drain-source current on/off modulation ratio higher than 10(5), enhancement n-type operation and subthreshold gate voltage swing of 2.11 V/decade. The NCC film FET characteristics have been measured in air ambient conditions and present good stability, after two weeks of being processed, without any type of encapsulation or passivation layer. The results obtained are comparable to ones produced for conventional cellulose paper, marking this out as a promising approach for attaining high-performance disposable electronics such as paper displays, smart labels, smart packaging, RFID (radio-frequency identification) and point-of-care systems for self-analysis in bioscience applications, among others.


This second motion for a new trial, based upon alleged perjury by a government witness and alleged newly discovered evidence, is made after the Court of Appeals affirmed the defendant's judgment of conviction,[1] as well as the denial of the prior motion for a new trial, based also upon alleged perjury of other witnesses, employees of the defendant.


Defendant was found guilty on December 30, 1969, after a seven-day jury trial on one count of a four-count indictment charging mail fraud violations.[2] Two counts, which concerned transistors labelled "JAN CGO 2N 1722," were dismissed by the court at the close of the government's case. The remaining two counts related to transistors labelled *1285 "2N 1225 RCA"; the jury acquitted on one count and found the defendant guilty on the other. The indictment charged that the defendant made false representations that the labelled 2N 1225 RCA transistors (1) "were manufactured by firms which did not manufacture them"; (2) "were newer than they in fact were"; (3) "were in containers received from the manufacturer when this was not in fact the case"; and (4) "were of higher quality than was in fact the case."


With respect to defendant's present motion, neither party requested an evidentiary hearing, and after argument it was submitted for decision on the moving and opposing affidavits.[3] The court, in its consideration of the motion, in addition to its recollection of events at the trial, of witnesses and their demeanor, has read the entire trial transcript.[4]


In order to put the defendant's motion in proper focus, it is desirable at the outset to outline the substance of testimony. The evidence abundantly established that soon after defendant had received an order for a shipment of 2N 1225 transistors, he ordered five peg stamps bearing the insignia "RCA" circled by "2N 1225" and letter designations "D" and "H7",[5] and that the casings of transistors shipped by defendant's firm were marked with the symbols from the peg stamps. The defendant's version of his purpose in ordering the stamps and the use to which they were put was a central issue at trial.


On his present motion, the defendant asserts that newly discovered evidence from RCA's files shows that Albert Kick, chief security officer for RCA Electronic Components, did not tell the truth when he testified at trial that RCA had not performed any tests on the transistors in evidence; the defendant contends that these tests show the transistors were manufactured by RCA and were of good quality.[6] The charge must be considered against the totality of the evidence.


The defendant Andrew Munchak, Jr. is the president and owner of Astronetics, Inc., a dealer in the buying and selling of surplus transistors and other electronic parts. In August 1967, F. G. Mason Engineering Company, a manufacturer of radio surveillance equipment, placed an order for 5000 "RCA 2N 1225" transistors. After passing through intermediate distributors, Astronetics, Inc. received an order on August 31 for "2N 1225" transistors. Two days thereafter, the defendant ordered from Patterson Stamp Company five "peg stamps" bearing the mark "RCA", circled by the designation "2N 1225", *1286 "H7" and "D". A peg stamp is a rubber dye at the end of a pencil-like shaft used for marking purposes. Several days after receiving the peg stamps, Astronetics shipped, in partial fulfillment of the order, approximately 2100 transistors which, after passing through intermediate distributors, finally were delivered to Mason Engineering. The casings of the 2100 transistors bore an RCA symbol similar to that appearing on the stamps Munchak had ordered. Collins, president of Patterson Stamp Company, testified that in his opinion the impressions on the tops of those transistors, nine of which were received in evidence at the trial, had been made by the peg stamps purchased by Munchak. A production supervisor of the Mason company testified that the transistors received by it failed to perform in the manner of prior "RCA 1225's"; they would regenerate or oscillate; they drew too much current and had a very short life span.[7] The deficiencies resulted in Mason company officials complaining to RCA, and the delivery by them to RCA in December 1967 of about fifteen of the transistors, with the bulk of the shipment returned to the intermediate company from which it had been purchased. Eventually these were returned to Astronetics.

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