EDS/SSC - DIELECTRIC BREAKDOWN IN THIN DIELECTRICS. FROM SILICON DIOXIDE TO LAYERED DIELECTRICS - 27/12 17:30hs GMT-3

[Brenda Rossi]

Invitation

The IEEE Joint chapter Nº 3 (EDS/SCC) of Argentina section Invite you to the lecture “Dielectric breakdown in thin dielectrics. From silicon dioxide to layered dielectrics” dictated by the IEEE distinguished lecture Dr. Felix Palumbo

Abstract
Thin dielectrics are the fundamental stone over which the semiconductor industry experienced its huge development. As the key element for manufacturing Metal Oxide Semiconductor Field Effect Transistors, guaranteeing the reliability of gate oxides has become more challenging with the pushing demands of the markets for improved performance in electronic devices. In this framework, understanding not only the statistics but the physical phenomena behind dielectric breakdown is crucial to ensure the reliability of modern and future electronic devices.

In this work, the fundamentals of thin dielectric breakdown and the state of the art of breakdown studies on novel materials is summarized, focusing on the physical phenomena that characterize thin film dielectric breakdown and the perspectives on novel 2D materials, that demonstrate a remarkable potential to be applied as gate insulators in future nano-electronic devices.

Register: https://events.vtools.ieee.org/m/295572