[Final Program] 2nd Latin America MOS-AK Workshop at LAEDC

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wladek

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Feb 25, 2020, 1:32:06 AM2/25/20
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2nd Latin America MOS-AK Workshop at LAEDC
(co-located with LAEDC /LASCAS)
Escazu, Costa Rica, February 25, 2020

Today, Professor Benjamin Iniguez URV, DEEEA, Tarragona, (SP) on behalf of the Extended MOS-AK TPC Committee will open 2nd consecutive Latin America MOS-AK Workshop

Scheduled, 2nd consecutive Latin America MOS-AK Workshop co-located with LAEDC /LASCAS aims to strengthen a network and discussion forum among experts in the field, enhance open platform for information exchange related to compact/SPICE modeling and Verilog-A standardization, bring people in the compact modeling field together, as well as obtain feedback from technology developers, circuit designers, and TCAD/EDA tool developers and vendors.
 
The MOS-AK workshop program is available online:

Venue:
Escazu, west of San José, 
Costa Rica

Online Registration is still open
(any related enquiries can be sent to regi...@mos-ak.org)

Postworkshop Publications:
Selected best MOS-AK technical presentation will be recommended for further publication
in a special 
Solid State Electronics issue on compact modeling 

W.Grabinski on behalf of International MOS-AK Committee
WG25022020

wladek

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Jul 31, 2020, 5:09:41 AM7/31/20
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Recently the 2nd Latin America MOS-AK Workshop at LAEDC was reported in IEEE EDS Newsletter, July 2020 Vol. 27, No. 3 ISSN: 1074 1879 by Lluis Marsal and Benjamin Iñiguez:

The 2nd Latin American edition of the MOS-AK Workshop on Compact Modeling was held at LAEDC in San Jose, Costa Rica, was held in conjunction with the Latin American Symposium on Circuits and Systems (LASCAS 2020).. It was chaired by Prof. Benjamin Iñiguez (Universitat Rovira I Virgili, Tarragona, Spain). It included five talks. Prof. Antonio Cerdeira (CINVESTAV, Mexico) presented an “Analytical Current Voltage Model for Double Gate a-IGZO TFTs with Symmetric Structure.” Prof. Alexander Kloes (THM, Giessen, Germany) addressed “Approaches for Analytical (Compact) Modeling of Tunneling Currents in MOS Transistors.” Prof. Jean-Michel Sallese (EPFL, Switzerland) gave a talk about “Modeling the Junctionless Ion Sensitive Field Effect Transistor” Prof. Gilson Wirth (UFRGS, Porto Alegre, Brazil) targeted “The area scaling of charge trap induced time-dependent variability.” Finally, Prof. Benjamin Iñiguez (URV, Tarragona, Spain) talked about “Characterization and modeling of 1/f noise in organic and IGZO TFTs”. Over 70 academics, professionals and students attended these events and enjoyed the discussions with the speakers. 
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