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Thanks for your reply, cody.I may give an example by explaining the problem clearly.In the "DeformedGrainMaterial" Class, we can only set the number of the deformed grains, see here. This means that we cannot control the size and distribution of the deformed grains (as well as the recrystallized grains). However, if we want to simulate recrystallization, we need to give these informations in the initial conditions, for example, the recrystallized grains may distribute on the grain boundaries of the deformed grains. In the MOOSE current test file, the deformed grains and the recrystallized grains experienced the same voronoi tessellation. So, my attempt is **to find an IC that can distribute the recrystallized grains on the boundaries of the original grains**.From your reply, as far as I understand, you added the small recrystallized grains __during__ the simulation and not __before__ the simulation.
My question is how to add new grains in this process, since it means the new OPs are also needed to add __during__ this process?
I hope my statement is clear enough to understand.Looking forward to your reply!
在 2017年11月23日星期四 UTC+8上午12:22:12,Cody Permann写道:I've collaborated with one developer and we've done quite a bit of work on recrystallization. I'm a little confused by your statement here. It seems like you are trying to address a problem that occurs _during_ the simulation. However, you are wanting to handle this by changing the behavior of one of the Initial Conditions. I'm not sure if I'm capturing your concern correctly or not, please clarify.I've revamped and created a system for Polycrystal initial conditions and updated the normal Voronoi condition along with the EBSD and Hex ICs to use the "new" system. I guess I haven't worked with PolycrystalVoronoiVoidIC much but I know I didn't change that class around at all. It may need some additional treatment. Anyway, if you can help me understand more about how you'd like this IC to behave, I may be able to advise you on how to proceed.CodyOn Tue, Nov 21, 2017 at 11:08 PM Xin-Bo <qix...@gmail.com> wrote:Dear MOOSE developers,--I encountered a problem when modeling recrystallization.As we know, when recrystallization begins, there are many small grains newly formed on the boundaries of the deformed grains. However, it is found that the current ICs for polycrystalline cannot meet the requirement, since these ICs cannot control the grain size and distribution of the new formed small grains.My current idea is to modify the "PolycrystalVoronoiVoidIC" class, as it can distribute the voids on the grain boundaries. By setting the variable that this IC acts on to another grain "gr", we may convert the voids to the ordinary small grains. However, since an extra "gr" is introduced, other objects, such as the relative Kernels, also have to be modified.Can anyone give me some advices on this problem?Thanks very much!Xin-Bo
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