Solid State Electronic Devices Streetman Pdf Free Download
Brie Hoffler
THE most widely used introduction to solid state electronic devices text, this book is designed to help students gain a basic understanding of semiconductor devices and the physical operating principles behind them. This two-fold approach 1) provides students with a sound understanding of existing devices, so that their studies of electronic circuits and systems will be meaningful, and 2) helps them develop the basic tools with which they can later learn about applications and the latest devices. The text provides one of the most comprehensive treatments of all the important semiconductor devices, and reflects the most current trends in the technology and theoretical understanding of the devices.
One of the most widely used introductory books on semiconductor materials, physics, devices and technology, Solid State Electronic Devices aims to: 1) develop basic semiconductor physics concepts, so students can better understand current and future devices; and 2) provide a sound understanding of current semiconductor devices and technology, so that their applications to electronic and optoelectronic circuits and systems can be appreciated. Students are brought to a level of understanding that will enable them to read much of the current literature on new devices and applications.
One of the most widely used introductory books on semiconductor materials, physics, devices and technology, Solid State Electronic Devices aims to: 1) develop basic semiconductor physics concepts, so students can better understand current and future devices; and 2) provide a sound understanding of current semiconductor devices and technology, so that their applications to electronic and optoelectronic circuits and systems can be appreciated. Students are brought to a level of understanding that will enable them to read much of the current literature on new devices and applications.
The increased use of optoelectronic devicessuch as TV screens and computer monitors in everyday life, calls for a material on which integration of all circuits may be performed. Silicon, the most widely used material in electronics, has limited application in optoelectronics due to its poor light emission property. In this article, the need for silicon photonics in present day ICs, and communication, the reason for its inefficient light emission, and recent breakthrough in the form of Si Raman laser are discussed.
P K Basu is a professor and the coordinator of the Centre of Advanced Study in Radio Physics and Electronics. His research interests are semiconductor physics, devices, photonics, optical communication, nanoelectronics and nanophotonics
Hybrid Hall effect (HHE) devices are a new class of reconfigurable logic devices that incorporate ferromagnetic elements to deliver non-volatile operation. A single HHE device may be configured on a cycle-by-cycle basis to perform any of four different logical computations (OR, AND, NOR, NAND), and will retain its state indefinitely, even if the power supply is removed from the device. In this paper, we introduce the HHE device and describe a number of reconfigurable circuits based on HHE devices, including reconfigurable logic gates and non-volatile table lookup cells.
Single-walled carbon nanotubes (SWCNTs) are used widely in fabricating nanoelectronic devices because of their unique electrical properties. In this paper, we report the fabrication of carbon nanotube field-effect transistors (CNTFETs)-based inverter ...
The main program topics are:
a) basic introduction to: quantum mechanics, statistical physics (Fermi-Dirac statistics) and solid state physics (Drude model, band structure);
b) main concepts of electrical transport in semiconductors (electron and hole concentration, doped semiconductors, drift and diffusion current, equilibrium conditions, generation and recombination, continuity equation);
c) detailed description of the physics, operation and fabrication of pn junctions (diodes): potential and electric field behavior, equilibrium conditions, biased conditions, demonstration of the current expressions, small-signal equivalent circuit, control charge model, reverse bias conditions;
d) detailed description of the physics, operation and fabrication of bipolar effect transistors (BJT): charge control model, demonstration of the Ebers-Moll equations and circuit, input and output characteristics, small-signal equivalent circuit;
e) detailed description of the metal-oxide-semiconductor (MOS) capacitor: band structure, distribution of the voltage difference, threshold voltage, charge behavior, capacitance-voltage curves;
f) detailed description of the physics, operation and fabrication of metal-oxide-semiconductor (MOS) field-effect transistor transistor: dependence of the threshold voltage on the voltage between source and bulk, demonstration of the output characteristics, body effect, small-signal equivalent circuit, short-channel effects.