Aphotoelectric sensor is a device used to determine the distance, absence, or presence of an object by using a light transmitter, often infrared, and a photoelectric receiver. They are largely used in industrial manufacturing. There are three different useful types: opposed (through-beam), retro-reflective, and proximity-sensing (diffused).
A self-contained photoelectric sensor contains the optics, along with the electronics. It requires only a power source. The sensor performs its own modulation, demodulation, amplification, and output switching. Some self-contained sensors provide such options as built-in control timers or counters. Because of technological progress, self-contained photoelectric sensors have become increasingly smaller.
Remote photoelectric sensors used for remote sensing contain only the optical components of a sensor. The circuitry for power input, amplification, and output switching is located elsewhere, typically in a control panel. This allows the sensor, itself, to be very small. Also, the controls for the sensor are more accessible, since they may be bigger.
When space is restricted or the environment too hostile even for remote sensors, fibre optics may be used. Fibre optics are passive mechanical sensing components. They may be used with either remote or self-contained sensors. They have no electrical circuitry and no moving parts, and can safely pipe light into and out of hostile environments.[1]
A through-beam arrangement consists of a receiver located within the line-of-sight of the transmitter. In this mode, an object is detected when the light beam is blocked from getting to the receiver from the transmitter.
A retroreflective arrangement places the transmitter and receiver at the same location and uses a reflector to bounce the inverted light beam back from the transmitter to the receiver. An object is sensed when the beam is interrupted and fails to reach the receiver.
A proximity-sensing (diffused) arrangement is one in which the transmitted radiation must reflect off the object in order to reach the receiver. In this mode, an object is detected when the receiver sees the transmitted source rather than when it fails to see it. As in retro-reflective sensors, diffuse sensor emitters and receivers are located in the same housing. But the target acts as the reflector so that detection of light is reflected off the disturbance object. The emitter sends out a beam of light (most often a pulsed infrared, visible red, or laser) that diffuses in all directions, filling a detection area. The target then enters the area and deflects part of the beam back to the receiver. Detection occurs and output is turned on or off when sufficient light falls on the receiver.
Some photo-eyes have two different operational types, light operate and dark operate. The light operates photo eyes become operational when the receiver "receives" the transmitter signal. Dark operate photo eyes become operational when the receiver "does not receive" the transmitter signal.
The detecting range of a photoelectric sensor is its "field of view", or the maximum distance from which the sensor can retrieve information, minus the minimum distance. A minimum detectable object is the smallest object the sensor can detect. More accurate sensors can often have minimum detectable objects of minuscule size.
An image sensor or imager is a sensor that detects and conveys information used to form an image. It does so by converting the variable attenuation of light waves (as they pass through or reflect off objects) into signals, small bursts of current that convey the information. The waves can be light or other electromagnetic radiation. Image sensors are used in electronic imaging devices of both analog and digital types, which include digital cameras, camera modules, camera phones, optical mouse devices,[1][2][3] medical imaging equipment, night vision equipment such as thermal imaging devices, radar, sonar, and others. As technology changes, electronic and digital imaging tends to replace chemical and analog imaging.
The two main types of digital image sensors are the charge-coupled device (CCD) and the active-pixel sensor (CMOS sensor), fabricated in complementary MOS (CMOS) or N-type MOS (NMOS or Live MOS) technologies. Both CCD and CMOS sensors are based on the MOS technology,[4] with MOS capacitors being the building blocks of a CCD,[5] and MOSFET amplifiers being the building blocks of a CMOS sensor.[6][7]
Cameras integrated in small consumer products generally use CMOS sensors, which are usually cheaper and have lower power consumption in battery powered devices than CCDs.[8] CCD sensors are used for high end broadcast quality video cameras, and CMOS sensors dominate in still photography and consumer goods where overall cost is a major concern. Both types of sensor accomplish the same task of capturing light and converting it into electrical signals.
Each cell of a CCD image sensor is an analog device. When light strikes the chip it is held as a small electrical charge in each photo sensor. The charges in the line of pixels nearest to the (one or more) output amplifiers are amplified and output, then each line of pixels shifts its charges one line closer to the amplifiers, filling the empty line closest to the amplifiers. This process is then repeated until all the lines of pixels have had their charge amplified and output.[9]
A CMOS image sensor has an amplifier for each pixel compared to the few amplifiers of a CCD. This results in less area for the capture of photons than a CCD, but this problem has been overcome by using microlenses in front of each photodiode, which focus light into the photodiode that would have otherwise hit the amplifier and not been detected.[9] Some CMOS imaging sensors also use Back-side illumination to increase the number of photons that hit the photodiode.[10] CMOS sensors can potentially be implemented with fewer components, use less power, and/or provide faster readout than CCD sensors.[11] They are also less vulnerable to static electricity discharges.
There are many parameters that can be used to evaluate the performance of an image sensor, including dynamic range, signal-to-noise ratio, and low-light sensitivity. For sensors of comparable types, the signal-to-noise ratio and dynamic range improve as the size increases. It is because in a given integration (exposure) time, more photons hit the pixel with larger area.
Exposure time of image sensors is generally controlled by either a conventional mechanical shutter, as in film cameras, or by an electronic shutter. Electronic shuttering can be "global," in which case the entire image sensor area's accumulation of photoelectrons starts and stops simultaneously, or "rolling" in which case the exposure interval of each row immediate precedes that row's readout, in a process that "rolls" across the image frame (typically from top to bottom in landscape format). Global electronic shuttering is less common, as it requires "storage" circuits to hold charge from the end of the exposure interval until the readout process gets there, typically a few milliseconds later.[14]
Special sensors are used in various applications such as thermography, creation of multi-spectral images, video laryngoscopes, gamma cameras, sensor arrays for x-rays, and other highly sensitive arrays for astronomy.[20]
While in general, digital cameras use a flat sensor, Sony prototyped a curved sensor in 2014 to reduce/eliminate Petzval field curvature that occurs with a flat sensor. Use of a curved sensor allows a shorter and smaller diameter of the lens with reduced elements and components with greater aperture and reduced light fall-off at the edge of the photo.[21]
Early analog sensors for visible light were video camera tubes. They date back to the 1930s, and several types were developed up until the 1980s. By the early 1990s, they had been replaced by modern solid-state CCD image sensors.[22]
The basis for modern solid-state image sensors is MOS technology,[23][24] which originates from the invention of the MOSFET by Mohamed M. Atalla and Dawon Kahng at Bell Labs in 1959.[25] Later research on MOS technology led to the development of solid-state semiconductor image sensors, including the charge-coupled device (CCD) and later the active-pixel sensor (CMOS sensor).[23][24]
The passive-pixel sensor (PPS) was the precursor to the active-pixel sensor (APS).[7] A PPS consists of passive pixels which are read out without amplification, with each pixel consisting of a photodiode and a MOSFET switch.[26] It is a type of photodiode array, with pixels containing a p-n junction, integrated capacitor, and MOSFETs as selection transistors. A photodiode array was proposed by G. Weckler in 1968.[6] This was the basis for the PPS.[7] These early photodiode arrays were complex and impractical, requiring selection transistors to be fabricated within each pixel, along with on-chip multiplexer circuits. The noise of photodiode arrays was also a limitation to performance, as the photodiode readout bus capacitance resulted in increased noise level. Correlated double sampling (CDS) could also not be used with a photodiode array without external memory.[6] However, in 1914 Deputy Consul General Carl R. Loop, reported to the state department in a Consular Report on Archibald M. Low's Televista system that "It is stated that the selenium in the transmitting screen may be replaced by any diamagnetic material".[27]
In June 2022, Samsung Electronics announced that it had created a 200 million pixel image sensor. The 200MP ISOCELL HP3 has 0.56 micrometer pixels with Samsung reporting that previous sensors had 0.64 micrometer pixels, a 12% decrease since 2019. The new sensor contains 200 million pixels in a 1-by-1.4-inch (25 by 36 mm) lens.[28]
The charge-coupled device (CCD) was invented by Willard S. Boyle and George E. Smith at Bell Labs in 1969.[29] While researching MOS technology, they realized that an electric charge was the analogy of the magnetic bubble and that it could be stored on a tiny MOS capacitor. As it was fairly straightforward to fabricate a series of MOS capacitors in a row, they connected a suitable voltage to them so that the charge could be stepped along from one to the next.[23] The CCD is a semiconductor circuit that was later used in the first digital video cameras for television broadcasting.[30]
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