mocmos tech import problems with 350nm MOSIS SCN3ME SCN3ME_SUBM

[Alexandre Rusev]

Hello folks

I am importing GDS/CIF cells of   MOSIS  SCN3ME_SUBM 350nm

technology (available here https://www.mosis.com/pages/Technical/Layermaps/lm-scmos_scn3me)

And then doing extraction (Tools->Network->Extract ...)

The technology has only one ACTIVE layer id both for p-active and n-active,

which are to be tell apart using P-select/N-select masks.

ACTIVE	43	CAA		2
N_PLUS_SELECT	45	CSN		4
P_PLUS_SELECT	44	CSP		4

So when I set id of 43 in my GDS mapping for P-active and N_active,

the result is that PMOS extracted properly bun NMOS becomes a set of

primitive nodes (P-actives, Poly, ...)

 

(tech layers table is here https://www.mosis.com/pages/design/flows/design-flow-scmos-kits)

Looks like that situation with mocmossub is generally the same

Can anyone suggest a correct route for importing GDS/CIF filescontaining the only one ACTIVE layer  both for P-active/N-active along with qualifier masks PSELECT/NSELECT (or P+SELECT/N+SELECT)

[Steven Rubin]

The solution is to create two Active layers in Electric, both with the same GDS number. Also create two Select layers with the different GDS numbers. Then use the appropriate Active and Select with the two types of transistors, contacts, and wires. Then, when extracting, the correct Active layer will match (assuming the correct Select is also there) and it will generate the proper GDS when used.

   -Steven Rubin