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Wed, 13 Nov 13 10.00am – 11.00am IMRE Seminar Room 1
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IMRE Seminar on Multi-Functionality of Reinforced Polymers and Composite Structures Prof Klaus Friedrich
Multi-functionality is the combination of different properties in one material so as to make it suitable for the use in applications in which different loading conditions must be sustained. Besides the mechanical load bearing capacity, other properties such as thermal stability, electrical conductivity or wear resistance can be of importance. In many cases, polymer based composites are the material of choice, since they can combine the intrinsic properties of the polymers (like light weight, corrosion resistance or toughness) with the unique properties of their reinforcements (such as electrical conductivity, wear resistance, or high mechanical stiffness and strength).
(Click
here for more information and registration) |
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Thu, 14 Nov 13 11.00am – 12.00nn IMRE Seminar Room 1
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IMRE Seminar on Recent Developments in the Processing of Bulk, Melt Processed (RE)BCO Superconductors for High Field Applications Professor David Cardwell FREng (RE)-Ba-Cu-O [(RE)BCO, where RE = rare earth element such as Y, Nd, Sm, Eu, Gd, etc.] high temperature superconductors (HTS) have significant potential for high field engineering applications at 77 K when fabricated in the form of large single grains (up to several cm in diameter) by the so-called top seeded melt growth process (TSMG). A novel Y2Ba4CuMOy (Y-2411, where M = U, Zr, Hf, Nb, Ta, W and Mo) phase that is effective at pinning magnetic flux quanta in bulk (RE)BCO HTS on the nm scale has been developed recently at Cambridge with a number of desirable properties, including crystallographic compatibility with the superconducting (RE)Be2Cu3O7 (RE-123) phase, chemical stability at the melt processing temperature and an ability to resist coarsening during the melt process. (Click here for more information and registration) |
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Tue, 19 Nov 13 2.30pm – 3.30pm IMRE Seminar Room 2
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IMRE Seminar on Band Offsets and Semiconductor Devices Prof John Robertson
In this talk, Prof Robertson will explain the calculation of band offsets between various semiconductors, and between semiconductors and oxides, which involves the metal induced gap state (MIGS) model plus interface dipoles. These values have a huge effect on high K oxides on semiconductors in CMOS, in tunnel FETs, in oxide TFTs and in OLEDs. The charge neutrality (CNL)that arises in the MIGS model is also related to limits to doping, and the hydrogen states. Offsets can be controlled by interface dipoles but that is not always easy. (Click here for more information and registration) |
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Thu, 21 Nov 13 10.00am – 11.00am IMRE Seminar Room 1
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IMRE Seminar on Living Radical Polymerization with Organic Catalysts: From Fundamental Reactions to Polymer Material Dr Atsushi Goto
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For a full listing of the seminars and workshops, please proceed to http://www.imre.a-star.edu.sg/eventsall.php
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