I looked, thank-you. Some related stuff but not what i was looking for.
So I sacrificed an old 256K (only) Apple branded GS memory card which I'm not sure if it worked anyway, and checked out the signals myself.
The falling edge of RAS during a memory expansion access cycle coincides with the rising edge of phi2. it is held low for three 14M cycles (about 210ns). In a read access the CAS is asserted 70ns later (one 14M cycle) and is released when RAS is also released (140ns), In a write access the CAS is asserted 35ns later than for a read (ie one and a half 14M clock cycles after RAS) and is still released when RAS is (105ns duration).
The signals are as follows (sorry about formatting):
RAS CAS [falling edges]
FRA0 A0 B0
FRA1 A1 A9 (MSEL= Hi) or B2 (MSEL = Low)
FRA2 A2 A10
FRA3 A3 A11
FRA4 A4 A12
FRA5 A5 A13
FRA6 A6 A14
FRA7 A7 A15
FRA8 A8 B1
FRA9 A9 A9 (MSEL = Hi) or B3 (MSEL = Low)
CROW<x> are B2 & B3 (MSEL = Hi) or B4 and B5 (MSEL = Low)
All bank signals are available on the data pin on the rising edge of Phi2.
The corollory is that on the rising edge of Phi2 the entire 24-bit address can be determined by the memory expansion card and that's what I wanted to know.
thanks everyone