Dear Dr. Naik,
May I asked some doubt related to charged 3D systems in VASP?
1. First we need to optimize geometry with dipole correction, i.e.,
IDIPOL = 4
DIPOL= coordinate of charged vacancy
EPSILON= Dielectric constant of the system
Then I can employ CoFFEE Program for potential alignment and spurious interaction correction?
Am I right?
Thanks and Regards
Brindaban Modak
BARC, Mumbai