Fwd: Tech talk : "Silicon on Insulator (SOI) Compact Modeling Challenges
Ashwith Rego
From: Sankara Reddy K S <kssre...@gmail.com>
Date: Thu, Mar 24, 2011 at 6:12 PM
Subject: Tech talk : "Silicon on Insulator (SOI) Compact Modeling Challenges
To: blr-secti...@listserv.ieee.org, blr-edss...@ieee.org
IEEE ED/SSC Bangalore Chapter Announcing,
Technical Talk: "Silicon on Insulator (SOI) Compact Modeling Challenges”
Venue: Golden Jubilee Seminar hall, ECE Department, Indian Institute of Science,
Bangalore - 560012
Date : 30th March 2011
Time : 4:00pm – 5:00pm
Abstract:
Silicon on Insulator (SOI) is a promising technology for radio frequency
(RF) integrated front-end modules (FEM's). The unique properties of SOI
which allow design freedom in ways not possible with bulk offerings also
pose substantial compact modeling challenges. In this seminar we will
present an overview of integrated RF FEM's and discuss some of the
high-power modeling challenges. Both BSIMSOI and PSPSOI models will be
covered. The talk will be accessible to all EE students with an interest
in RF semiconductor devices and circuits.
Speaker Biographies:
Madabusi Govindarajan received his Bachelor's degree in Electrical
Engineering from IIT-Madras in 1988, and the Ph.D degree also in
Electrical
Engineering from the University of Southern California, Los Angeles, in
1994. At USC he worked on high-speed circuits based on GaAs and InP HBT
technologies. From 1994-99 he was a faculty member at the Department of
Electrical Engineering, IIT-Bombay, where he became an Associate
Professor.
At IIT-B Govindarajan taught courses in analog circuits and
electromagnetism, and pursued research projects in high-speed systems.
From
1999-2002 he worked in the San Francisco Bay Area at LuxN, an innovative
start-up in the metropolitan optical networking area. From 2002-05 he was
with Scintera, a fabless Bay Area start-up that developed a path-breaking
line of 10 Gbps electronic dispersion compensation IC's in standard CMOS.
From 2005-2007 Govindarajan was with Signalguru, a Bangalore-based
consultancy in high-speed test & measurement. In 2007 he joined IBM's
Semiconductor R&D Center (SRDC) in Bangalore, where he is with the design
enablement group, focusing on compact modeling of RF derivative
processes.
Govindarajan's technical interests are in high-speed/RF devices and
circuits.
Tamilmani Ethirajan received his B.Sc in Physics from Madras University
in
1992, M.Sc Physics from IIT-Madras in 1994 and M.Tech in
Micro-Electronics
from IIT-Bombay in 1999. From 2000-2007 he worked as an
RF-characterization
engineer at Philips Semiconductor in Nijmegen, the Netherlands. Later he
worked at the NXP-ST Alliance as a device modeling engineer at Crolles,
France. In this position he developed compact models, including PSP, for
advanced technologies down to 45nm. He joined the Semiconductor Research
and Development center at IBM Bangalore in 2007 as a FET modeling
Engineer,
focusing on RF-SOI technologies. His primary interests are semiconductor
devices and statistical/quantum physics.
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Ashwith J. Rego
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