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Re: project design
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Vivek Subramanian
Nov 25, 2008, 10:55:46 AM11/25/08
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"Syed Reza Bahadur" <s...@imail.EECS.Berkeley.EDU> wrote in message
news:ggg6k9$ea6$1...@agate.berkeley.edu...
>
> 1) It says to find the depletion widths as a fuctin of applied bias- is it
> fair
> to assume that applied bias is constant through out the device?
No.
> 2) Also how does P+ poly Si at contact of base affect things? It seems
> like
> it shouldn't affect things much since the main action/transport is going
> from N
> of emitter to N of collector through the P of the base
You can ignore the poly-base contact.
> 3) What does it mean by equilibrium carrier concentrations?
np0, pn0, etc.
>
> Thank you
>
> Reza
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