G'day people of wisdom!
I have a project that writes to an SD card, and is externally powered. It's based on the STM32F4, so the current draw is about 200mA.
Since it's externally powered and I don't trust for a second that the users will do a proper shut down, I have the problem that my SD card will get corrupted by getting powered off mid - write.
So I was thinking of having an "electron reservoir" somewhere in the power path.
My current set up is thus:
Vin (8-34V) -> Switch Mode Power Supply (SMPS) -> Diode (BAT4JFILM) -> Linear Voltage Regulator (LDO).
The SMPS outputs 5V, the linear 3.3V.
I was thinking of putting a largish capacitor after the diode, where the voltage is about 4.5V (due to the drop of the diode under load). I monitor the input voltage before the SMPS, so I can find out when the thing is unplugged.
I've done a basic simulation and a 1000uF capacitor will give me about 5ms response time, which should be enough for me to issue an fclose() command.
I have 2 problems with this set up: massive inrush current, about 5A, which my SMPS won't be able to supply, which may work out - the capacitor will charge up more slowly, but the SMPS may not like it.
The other problem is that this large capacity would probably have to be. An electrolytic, which I'm trying to avoid due to the exploding nature :-)
I have looked at super cap, but their high ESR rules then out. Also, having a tiny LiPo is also ruled out due to the complexity (and, again, fire).
Anyone have any ideas / suggestions?
Tap off the SMPS via a 10ohm resistor to charge the capacitor (deals with inrush current).
Connect the capacitor via a second diode to the LDO - the two diodes give power supply OR'ing.
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Yeah, charging the cap via a diode + resistor is better - stops the capacitor discharging back through the power supply in shutdown. Also lowers the capacitor voltage to guarantee that there is no current passing through the OR'ing diode.
The two paths are:
SMPS -> diode -> resistor -> cap -> diode -> LDO
SMPS -> diode -> LDO
So that's TWO diodes in the path between the SMPS & the linear... Time to do some actual tests, me thinks!
But thanks for the advice. I am monitoring in input voltage, before the SMPS and my MCU has an analogue watchdog when its input falls below a set threshold, and it triggers and interrupt.
I may try that out...
One way to improve this is to replace one or more of the diodes with small P-MOSFETs – wired “backwards” so the internal diode is in the correct direction, and when active you get almost no voltage drop.
Some more info at http://www.eevblog.com/forum/projects/mosfet-as-blocking-diode-how/
Kean
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The ESR is around 50Ohms or more... I would have thought that the voltage drop would have be significant to rule out, but I'll give it another look...

Attached are some quickly drawn up LTspice models – diode OR-ing vs. P-Ch MOSFET OR-ing. Note the specific way the FETs are wired – the FETs internal body diode (not shown) is in the same direction as the normal diodes.
When the difference in voltage between the two supplies is more than the gate threshold the P-FET turns on, otherwise you get the diode drop of the internal body diode. MOSFET selection will need to be based on review of Rds(on), Vgs(th), Vgs(max), and Vds(max).
Of course using comparators to drive the FETs would give better results.

Kean
From: sydney-h...@googlegroups.com [mailto:sydney-h...@googlegroups.com] On Behalf Of tALSit de CoD
Sent: Monday, 15 April 2013 7:41 PM
To: Robots&Dinosaurs
Subject: Re: [RnD] Power-down emergency power source.
Though, I just did a search, and found some swanky new supercaps with sub-1Ohm ESR... Like this one, a 5.5V 16mF, with 500mOhm
Attached are some quickly drawn up LTspice models – diode OR-ing vs. P-Ch MOSFET OR-ing. Note the specific way the FETs are wired – the FETs internal body diode (not shown) is in the same direction as the normal diodes.
When the difference in voltage between the two supplies is more than the gate threshold the P-FET turns on, otherwise you get the diode drop of the internal body diode. MOSFET selection will need to be based on review of Rds(on), Vgs(th), Vgs(max), and Vds(max).
Of course using comparators to drive the FETs would give better results.
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Arik,
There is no current spike. The FETs won’t ever be conducting at the same time, but their body diodes will be. The voltage sources are specified with 1R series resistance, and there is a 20R load, so you’re seeing the sources droop a little at those cross over points.
Kean

From: sydney-h...@googlegroups.com [mailto:sydney-h...@googlegroups.com] On Behalf Of Arik Baratz
Sent: Tuesday, 16 April 2013 10:43 AM
To: sydney-h...@googlegroups.com
Subject: Re: [RnD] Power-down emergency power source.
On 16 April 2013 04:54, Kean Maizels <Ke...@kean.com.au> wrote:
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Arik,
There is no current spike. The FETs won’t ever be conducting at the same time, but their body diodes will be. The voltage sources are specified with 1R series resistance, and there is a 20R load, so you’re seeing the sources droop a little at those cross over points.

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Isn't ESR just a by - product of the manufacturing technique? As in, supercaps tend to have high ESR (~50Ohm), because they are made for long lasting (months), low current (uA's) supply to things like RTC, where low ESR isn't important. And electrolytic are typically used for very short stabilisation of high current, so their ESR has to be low or else they won't be able to supply the current?
That's my understanding on caps.
Now, in my case, a 1000uF electrolytic cap with 0.08Ohm ESR will draw around 5A until it charges, which is in microseconds, but still way too high. Something with more ESR would be better for charging, but then I get into the problem of discharge. If it has 50Ohm ESR, the voltage drop of the car's supply is non-good!
I'm sure that a 0Ohm (if possible) cap would cause all sorts of other issues too...
tALSit, the problem is that, as shown, the circuit won't kill the inrush current you said you were worried about. C1 will just charge via D1. The additional diode prevents this but at a cost of voltage in the powering-down scenario, which will affect your run time.
tALSit, the problem is that, as shown, the circuit won't kill the inrush current you said you were worried about. C1 will just charge via D1. The additional diode prevents this but at a cost of voltage in the powering-down scenario, which will affect your run time.
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Oh, and I think for this application, electrolytics should be fine.
The usual conditions that age these components do not appear to apply in the situation.
PC motherboards these days are using a "solid" electrolytic for long-life.
What I really think is that the inrush current shouldn't be a problem. The SMPS already will have some substantial output capacitors in play and a simple diode/capacitor arrangement should be sufficient. Even then, the additional capacitance will only be extended (by some small amount) the inrush current of the SMPS charging its own capacitors.
I suspect the situation you will more likely encounter is that when input power to the SMPS is removed, the output voltage will decay at a relatively slow rate due to the output caps in play. Unless you have a particularly sensitive method of detecting the voltage decline, you may find that the voltage in your secondary cap as already started to droop significantly before you notice, possibly giving less reaction time than you had planned.
If the failure case you are protecting against is the sudden removal of the connection between the SMPS and the rest of the circuit, then things will likely work as you expect as the charge in the output caps won't be in play. It may be worth putting a 10k resistor across the SMPS connection to the circuit to quickly drain any parasitic capacitances hanging around.
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You mean in OVERcurrent mode where I'm trying to push the component way past its specifications?
> Does anyone know whether the A10 chip actually supports gigabit
> ethernet? (on this board, or anywhere)
Fileserving might be one.
I ordered an i.mx6 based device (GK802) myself the other day,
supposedly they have much better vendor kernel and bootloader support
- a proper uboot without any weird hacks. It's probably only a
significant difference if you want to mess with installing OSes from
scratch, but I thought I'd mention it.
- Angus
>
Didn't know about the reply-to-thread issue. I do the reply thing for efficiency (laziness) reasons rather than trying to remember the group address.
GB Ethernet is not only about the bandwidth/volume of traffic - it is also about the latency of traffic. While these devices may not handle the volume, they will possible benefit from the latency. There are other considerations as well.
Didn't know about the reply-to-thread issue. I do the reply thing for efficiency (laziness) reasons rather than trying to remember the group address.
GB Ethernet is not only about the bandwidth/volume of traffic - it is also about the latency of traffic. While these devices may not handle the volume, they will possible benefit from the latency. There are other considerations as well.
The only thing I don't like is that it is BSD... Can't easily run say Crashplan on it...
Otherwise it is great, designed to run off USB I presume... The HP N40L has an internal USB socket so that was cool :)