In comp.arch.embedded,
rickman <
gnu...@gmail.com> wrote:
> On 5/3/2013 3:29 PM, Luther Blackwood wrote:
>> I've been toying around with the idea of using transistors to power gate devices, an SD card for example. Is there any proper practices when doing this and/or anything to be concerned about?
>
> I'm no expert, but what I have observed is that there is a preference
> for n-channel FETs for this purpose since they have a lower channel
> resistance for a given chip size. The problem with an n-channel device
I think this is still true, but p-chanel devices have become a lot
better in the last 10(?) years. But so have the n-channels and so there
is still a difference. But I think current p-channels can have a lower
resistance than 'old' n-channels.
> is that it needs a gate voltage higher than Vdd to turn on the FET. A
> p-channel device does not have this issue, but you will need a larger
> and more expensive device to get the same Ron and therefor the same low
> voltage drop. This is just a matter of cost really. It will cost you a
> bit more for the p-channel device which meets your spec.
>
> However, do you really need this? I believe there are already power
> control features in SD cards as well as most peripherals. Many devices
> drop to single digit uA levels if not lower.
Maybe we made the same mistakes as Mark, but we also experienced SD cards
using 0.5mA. We simply put a sot-23 p-channel in the power line and that
works fine. We used the FDC6324L, but there must be other suitable devices.
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